Bio
Education
December 2007: Ph.D. in Electrical Engineering at the University of South Florida, Tampa, FL, USA with the dissertation: “Silicon Carbide Biocompatibility, Surface Control and Electronic Cellular Interaction for Biosensing Applications”.
July 2004: Laurea (M.S.) in Electrical Engineering at the University of Perugia, Italy, with the thesis: “Characterization of Scanning Spreading Resistance Microscopy (SSRM) Measurements by Device Simulation” performed in collaboration with the Swiss Federal Institute of Technology (ETH) of Zurich, Switzerland (grade: 110/110 cum laude).
July 1998: Scientific Lyceum Diploma from the "Liceo Scientifico L. Salvatorelli", Marsciano (PG), Italy (grade: 60/60).
Experience
April 2011 to present: Senior Postdoc, Center for Nanotechnology Innovation @ NEST, Italian Institute of Technology (IIT), Pisa, Italy.
March 2008 to March 2011: Postdoc (Alexander von Humboldt Postdoctoral Fellowship), Interface Analysis Group, Max Planck Institute for Solid State Research, Stuttgart, Germany.
January 2005 to December 2007: Graduate Research Assistant, Electrical Engineering Department, University of South Florida, Tampa, FL, USA.
January 2004 to June 2004: Masters Student, Integrated Systems Laboratory, Swiss Federal Institute of Technology (ETH), Zurich, Switzerland.
Other Publications
Articles in Journals
S. Goler, C. Coletti, V. Pellegrini, K. V. Emtsev, S. Forti, U. Starke, F. Beltram, S. Heun, "Atomic and electronic structure of zerolayer and quasi-free standing monolayer graphene on SiC(0001)", arXiv:1111.4918v1, submitted.
S. Forti, K.V. Emtsev, C. Coletti, A.A. Zakharov, U. Starke, “Large-area homogeneous quasifree standing epitaxial graphene on SiC(0001): Electronic and structural characterization”, Phys. Rev. B 84, 125449 (2011).
K.V. Emtsev, A.A. Zakharov, C. Coletti, S. Forti, U. Starke, “Ambipolar doping in quasi-free epitaxial graphene on SiC(0001) controlled by Ge intercalation”, Phys. Rev. B 84, 125423 (2011).
C. Coletti, K.V. Emtsev, A.A. Zakharov, T. Ouisse, D. Chaussende and U. Starke, “Large area quasi-free standing graphene on 3C-SiC(111),” Appl. Phys. Lett. 99, 081904 (2011).
A. Oliveros, C. Coletti, C. Frewin, C. Locke, U. Stake, S.E. Saddow, “Cellular interactions on epitaxial graphene on SiC(0001) substrates”, Materials Science Forum, Vol. 679-680, pp 831-834 (2011).
S.E Saddow, C.L. Frewin, C. Coletti, N. Schettini, A. Oliveros, M. Jarosezski, “Single-crystal silicon carbide: a biocompatible and hemocompatible semiconductor for advanced biomedical applications”, Materials Science Forum, Vol. 679-680, pp 824-830 (2011).
C. Riedl, C. Coletti, U. Starke, “Structural and electronic properties of epitaxial graphene on SiC(0001): a review of growth, characterization, transfer doping and hydrogen intercalation”, J. Phys. D: Appl. Phys. 43 374009 (2010).
C. Coletti, C. Riedl, D.S. Lee, B. Krauss, K. von Klitzing, J. Smet, U. Starke, “Band structure engineering of epitaxial graphene on SiC by molecular doping“, Physical Review B, 81 (23), 235401 (2010).
C. Riedl, C. Coletti, T. Iwasaki, A.A. Zakharov, and U. Starke, “Hydrogen intercalation below epitaxial graphene on SiC(0001)”, Materials Science Forum 645-648, pp 623-628 (2010).
C. Riedl, C. Coletti, T. Iwasaki, A. A. Zakharov, U. Starke, “Quasi-free-standing epitaxial graphene on SiC obtained by hydrogen intercalation”, Physical Review Letters, 103 (24), 24684 (2009).
C.L. Frewin, C. Coletti, C. Riedl, U. Starke, S.E. Saddow, “A Comprehensive Study of Hydrogen Etching on the Major SiC Polytypes and Crystal Orientations,” Materials Science Forum 615-617, 589-592 (2009).
C. Coletti, C.L. Frewin, A.M. Hoff, S.E. Saddow, “Surface passivation of 3C-SiC(001) by hydrogen treatment”, Electrochemical and Solid-State Letters, 11 (10), H285-H287 (2008).
C. Coletti, S.E. Saddow, M. Hetzel, C. Virojanadara, and U. Starke, “Surface studies of H2-etched 3C-SiC(001) on Si(001),” Appl. Phys. Lett., 91, 061914 (2007).
U. Starke, W.Y. Lee, C. Coletti, S.E. Saddow, R.P. Devaty and W.J. Choyke, “SiC Pore Surfaces: Surface Studies of 4H-SiC (-1102) and 4H-SiC (-110 -2),” Materials Science Forum, Vol. 527-529, 677-680 (2006).
U. Starke, W.Y. Lee, C. Coletti, S.E. Saddow, R.P. Devaty, and W.J. Choyke, “SiC Pore Surfaces: Surface Studies of 4H-SiC (-1102) and 4H-SiC (-110 -2),” Appl. Phys. Lett., 88 (3), 031915 (2006).
Refereed Articles in Conference Proceedings
C. Coletti, S. Forti, K. V. Emtsev, U. Starke, “Tailoring the electronic structure of epitaxial graphene on SiC(0001): transfer doping and hydrogen intercalation,” Carbon Nanostructures, Springer, in press.
S.E Saddow, C. Coletti, C.L. Frewin, N. Schettini, A. Oliveros, M. Jarosezski, “Single-crystal silicon carbide: a biocompatible and hemocompatible semiconductor for advanced biomedical applications”, Mater. Res. Soc. Symp. Proc., Vol. 1246, pp. 193-198 (2010).
C. Coletti, M. J. Jaroszeski, A. Pallaoro, A. M. Hoff, S. Iannotta and S. E. Saddow, “Biocompatibility and wettability of crystalline SiC and Si surfaces,” Conf Proc IEEE Eng Med Biol Soc. 2007, 5850-3 (2007).
C. Coletti, M. J. Jaroszeski, A. M. Hoff and S.E. Saddow, “Culture of mammalian cells on single crystal SiC substrates,” Mater. Res. Soc. Symp. Proc., 950 (2007).
C. Coletti, M. Hetzel, C. Virojanadara, U. Starke, and S. E. Saddow, “Surface morphology and structure of hydrogen etched 3C-SiC(001) on Si(001),” Mater. Res. Soc. Symp. Proc., 911, 131 (2006).
S. Soubatch, W. Y. Lee, M. Hetzel, C. Virojanadara, C. Coletti, S. E. Saddow and U. Starke, “Atomic Structure of Non-Basal-Plane SiC Surfaces: Hydrogen Etching and Surface Phase Transformations,” Mater. Res. Soc. Symp. Proc., 911, 271 (2006).
Patents
C. L. Frewin, S. E. Saddow, C. Coletti, “Graphene electrodes on planar silicon carbide long term implantable prosthetic device”, pending, provisional number 10B087.
Books
C. Coletti, M. J. Jaroszeski, A. M. Hoff and S.E. Saddow , Chapter 6 -A. Oliveros C. Coletti and S.E. Saddow, Chapter 14 of “Silicon Carbide biotechnology – A biocompatible semiconductor for advanced biomedical devices and applications” Edited by S.E. Saddow, Elsevier, in press.