Stiven Forti

Post Doc

Research Lines

2D Materials Engineering

Center

cni-nest

IIT Publications

  • 2019
  • Kumar A., Telesio F., Forti S.iit, Al-Temimy A.iit, Coletti C.iit, Serrano-Ruiz M., Caporali M., Peruzzini M., Beltram F., Heun S.
    DOI

    STM study of exfoliated few layer black phosphorus annealed in ultrahigh vacuum

    2D Materials, vol. 6, (no. 1)
  • 2018
  • Buch H.iit, Rossi A.iit, Forti S.iit, Convertino D.iit, Tozzini V., Coletti C.iit
    DOI

    Erratum to: Superlubricity of epitaxial monolayer WS2 on graphene (Nano Research, (2018), 10.1007/s12274-018-2108-7)

    Nano Research
  • Rossi A.iit, Spirito D.iit, Bianco F., Forti S.iit, Fabbri F.iit, Buch H.iit, Tredicucci A., Krahne R.iit, Coletti C.iit
    DOI

    Patterned tungsten disulfide/graphene heterostructures for efficient multifunctional optoelectronic devices

    Nanoscale, vol. 10, (no. 9), pp. 4332-4338
  • Buch H.iit, Rossi A.iit, Forti S.iit, Convertino D.iit, Tozzini V., Coletti C.iit
    DOI

    Superlubricity of epitaxial monolayer WS2 on graphene

    Nano Research, vol. 11, (no. 11), pp. 5946-5956
  • 2017
  • Forti S.iit, Starke U., Coletti C.iit

    Atomic intercalation at the SiC/graphene interface

    Growing Graphene on Semiconductors, Publisher: Pan Stanford
  • Forti S.iit, Rossi A., Buech H., Cavallucci T., Bisio F., Sala A., Mentes T. O., Locatelli A., Magnozzi M., Canepa M., Mueller K., Link S., Starke U., Tozzini V., Coletti C.iit
    DOI

    Electronic properties of single-layer tungsten disulfide on epitaxial graphene on silicon carbide

    Nanoscale
  • 2016
  • Khademi A., Sajadi E., Dosanjh P., Bonn D.A., Folk J.A., Stohr A., Starke U., Forti S.iit
    DOI

    Alkali doping of graphene: The crucial role of high-temperature annealing

    Physical Review B, vol. 94, (no. 20)
  • Stohr A., Forti S.iit, Link S., Zakharov A.A., Kern K., Starke U., Benia H.M.
    DOI

    Intercalation of graphene on SiC(0001) via ion implantation

    Physical Review B, vol. 94, (no. 8)
  • Forti S.iit, Stohr A., Zakharov A.A., Coletti C.iit, Emtsev K.V., Starke U.
    DOI

    Mini-Dirac cones in the band structure of a copper intercalated epitaxial graphene superlattice

    2D Materials, vol. 3, (no. 3)
  • 2014
  • Coletti C.iit, Forti S., Principi A., Emtsev K.V., Zakharov A.A., Daniels K.M., Daas B.K., Chandrashekhar M.V.S., Macdonald A.H., Polini M., Starke U.
    DOI

    Revealing the electronic band structure of quasi-free trilayer graphene on SiC(0001)

    Materials Research Society Symposium - Proceedings, vol. 1693
  • 2013
  • Goler S.iit, Coletti C.iit, Piazza V.iit, Pingue P., Colangelo F., Pellegrini V., Emtsev K.V., Forti S., Starke U., Beltram F.iit, Heun S.
    DOI

    Revealing the atomic structure of the buffer layer between SiC(0 0 0 1) and epitaxial graphene

    Carbon, vol. 51, (no. 1), pp. 249-254
  • Coletti C.iit, Forti S., Principi A., Emtsev K.V., Zakharov A.A., Daniels K.M., Daas B.K., Chandrashekhar M.V.S., Ouisse T., Chaussende D., Macdonald A.H., Polini M., Starke U.
    DOI

    Revealing the electronic band structure of trilayer graphene on SiC: An angle-resolved photoemission study

    Physical Review B - Condensed Matter and Materials Physics, vol. 88, (no. 15)
  • 2012
  • Starke U., Forti S., Emtsev K.V., Coletti C.iit
    DOI

    Engineering the electronic structure of epitaxial graphene by transfer doping and atomic intercalation

    MRS Bulletin, vol. 37, (no. 12), pp. 1177-1186
  • 2011
  • Emtsev K.V., Zakharov A.A., Coletti C.iit, Forti S., Starke U.
    DOI

    Ambipolar doping in quasifree epitaxial graphene on SiC(0001) controlled by Ge intercalation

    Physical Review B - Condensed Matter and Materials Physics, vol. 84, (no. 12)