Stiven Forti

Post Doc

Research Lines

2D Materials Engineering

Center

CNI@NEST Pisa

Contacts

+39 050 509120

IIT Publications

  • 2020
  • Pezzini S.iit, Miseikis V.iit, Piccinini G.iit, Forti S.iit, Pace S.iit, Engelke R., Rossella F., Watanabe K., Taniguchi T., Kim P., Coletti C.iit
    DOI

    30°-twisted bilayer graphene quasicrystals from chemical vapor deposition

    Nano Letters, vol. 20, (no. 5), pp. 3313-3319
  • Piccinini G.iit, Forti S.iit, Martini L.iit, Pezzini S.iit, Miseikis V.iit, Starke U., Fabbri F.iit, Coletti C.iit
    DOI

    Deterministic direct growth of WS2 on CVD graphene arrays

    2D Materials, vol. 7, (no. 1)
  • Aeschlimann S., Rossi A.iit, Chavez-Cervantes M., Krause R., Arnoldi B., Stadtmuller B., Aeschlimann M., Forti S.iit, Fabbri F.iit, Coletti C.iit, Gierz I.
    DOI

    Direct evidence for efficient ultrafast charge separation in epitaxial WS2/graphene heterostructures

    Science advances, vol. 6, (no. 20)
  • Fabbri F.iit, Dinelli F., Forti S.iit, Sementa L., Pace S.iit, Piccinini G.iit, Fortunelli A., Coletti C.iit, Pingue P.
    DOI

    Edge Defects Promoted Oxidation of Monolayer WS2 Synthesized on Epitaxial Graphene

    Journal of Physical Chemistry C, vol. 124, (no. 16), pp. 9035-9044
  • Magnozzi M., Ferrera M., Piccinini G.iit, Pace S.iit, Forti S.iit, Fabbri F., Coletti C.iit, Bisio F., Canepa M.
    DOI

    Optical dielectric function of two-dimensional WS2 on epitaxial graphene

    2D Materials, vol. 7, (no. 2)
  • Backes C., Abdelkader A.M., Alonso C., Andrieux-Ledier A., Arenal R., Azpeitia J., Balakrishnan N., Banszerus L., Barjon J., Bartali R., Bellani S.iit, Berger C., Berger R., Ortega M.M.B., Bernard C., Beton P.H., Beyer A., Bianco A., Boggild P., Bonaccorso F.iit, Barin G.B., Botas C., Bueno R.A., Carriazo D., Castellanos-Gomez A., Christian M., Ciesielski A., Ciuk T., Cole M.T., Coleman J., Coletti C.iit, Crema L., Cun H., Dasler D., De Fazio D., Diez N., Drieschner S., Duesberg G.S., Fasel R., Feng X., Fina A., Forti S.iit, Galiotis C., Garberoglio G., Garcia J.M., Garrido J.A., Gibertini M., Golzhauser A., Gomez J., Greber T., Hauke F., Hemmi A., Hernandez-Rodriguez I., Hirsch A., Hodge S.A., Huttel Y., Jepsen P.U., Jimenez I., Kaiser U., Kaplas T., Kim H., Kis A., Papagelis K., Kostarelos K., Krajewska A., Lee K., Li C., Lipsanen H., Liscio A., Lohe M.R., Loiseau A., Lombardi L., Lopez M.F., Martin O., Martin C., Martinez L., Martin-Gago J.A., Martinez J.I., Marzari N., Mayoral A., McManus J., Melucci M., Mendez J., Merino C., Merino P., Meyer A.P., Miniussi E., Miseikis V.iit, Mishra N.iit, Morandi V., Munuera C., Munoz R., Nolan H., Ortolani L., Ott A.K., Palacio I., Palermo V., Parthenios J., Pasternak I., Patane A., Prato M., Prevost H., Prudkovskiy V., Pugno N., Rojo T., Rossi A.iit, Ruffieux P., Samori P., Schue L., Setijadi E., Seyller T., Speranza G., Stampfer C., Stenger I., Strupinski W., Svirko Y., Taioli S., Teo K.B.K., Testi M., Tomarchio F., Tortello M., Treossi E., Turchanin A., Vazquez E., Villaro E., Whelan P.R., Xia Z., Yakimova R., Yang S., Yazdi G.R., Yim C., Yoon D., Zhang X., Zhuang X., Colombo L., Ferrari A.C., Garcia-Hernandez M.
    DOI

    Production and processing of graphene and related materials

    2D Materials, vol. 7, (no. 2)
  • Forti S.iit, Link S., Stohr A., Niu Y., Zakharov A.A., Coletti C.iit, Starke U.
    DOI

    Semiconductor to metal transition in two-dimensional gold and its van der Waals heterostack with graphene

    Nature Communications, vol. 11, (no. 1)
  • 2019
  • Pace S.iit, Ferrera M., Piccinini G., Mishra N., Magnozzi M., Forti S., Bisio F., Canepa M., Fabbri F., Coletti C.

    High Temperature Instability of WS2 Monolayers grown by CVD process

    Graphene 2019
  • Link S., Forti S., Stohr A., Kuster K., Rosner M., Hirschmeier D., Chen C., Avila J., Asensio M.C., Zakharov A.A., Wehling T.O., Lichtenstein A.I., Katsnelson M.I., Starke U.
    DOI

    Introducing strong correlation effects into graphene by gadolinium intercalation

    Physical Review B, vol. 100, (no. 12)
  • Colangelo F., Morandi A., Forti S.iit, Fabbri F.iit, Coletti C.iit, Di Girolamo F.V., Di Lieto A., Tonelli M., Tredicucci A., Pitanti A., Roddaro S.
    DOI

    Local tuning of WS2 photoluminescence using polymeric micro-actuators in a monolithic van der Waals heterostructure

    Applied Physics Letters, vol. 115, (no. 18)
  • Kumar A., Telesio F., Forti S.iit, Al-Temimy A.iit, Coletti C.iit, Serrano-Ruiz M., Caporali M., Peruzzini M., Beltram F., Heun S.
    DOI

    STM study of exfoliated few layer black phosphorus annealed in ultrahigh vacuum

    2D Materials, vol. 6, (no. 1)
  • Mishra N.iit, Forti S.iit, Fabbri F.iit, Martini L.iit, McAleese C., Conran B.R., Whelan P.R., Shivayogimath A., Jessen B.S., Buss L., Falta J., Aliaj I., Roddaro S., Flege J.I., Boggild P., Teo K.B.K., Coletti C.iit
    DOI

    Wafer-Scale Synthesis of Graphene on Sapphire: Toward Fab-Compatible Graphene

    Small, vol. 15, (no. 50)
  • Khademi A., Kaasbjerg K., Dosanjh P., Stöhr A., Forti S., Starke U., Folk J. A.
    DOI

    Weak localization measurements of electronic scattering rates in Li-doped epitaxial graphene

    Physical Review B - Condensed Matter and Materials Physics, vol. 100, (no. 16), pp. 161405
  • 2018
  • Buch H.iit, Rossi A.iit, Forti S.iit, Convertino D.iit, Tozzini V., Coletti C.iit
    DOI

    Erratum to: Superlubricity of epitaxial monolayer WS2 on graphene (Nano Research, (2018), 10.1007/s12274-018-2108-7)

    Nano Research
  • Rossi A.iit, Spirito D.iit, Bianco F., Forti S.iit, Fabbri F.iit, Buch H.iit, Tredicucci A., Krahne R.iit, Coletti C.iit
    DOI

    Patterned tungsten disulfide/graphene heterostructures for efficient multifunctional optoelectronic devices

    Nanoscale, vol. 10, (no. 9), pp. 4332-4338
  • Buch H.iit, Rossi A.iit, Forti S.iit, Convertino D.iit, Tozzini V., Coletti C.iit
    DOI

    Superlubricity of epitaxial monolayer WS2 on graphene

    Nano Research, vol. 11, (no. 11), pp. 5946-5956
  • 2017
  • Forti S.iit, Starke U., Coletti C.iit
    DOI

    Atomic intercalation at the SiC-graphene interface

    Growing Graphene on Semiconductors, pp. 141-180, Publisher: Pan Stanford Publishing Pte. Ltd.
  • Forti S.iit, Starke U., Coletti C.iit

    Atomic intercalation at the SiC/graphene interface

    Growing Graphene on Semiconductors, Publisher: Pan Stanford
  • Forti S.iit, Rossi A.iit, Buch H.iit, Cavallucci T., Bisio F., Sala A., Mentes T.O., Locatelli A., Magnozzi M., Canepa M., Muller K., Link S., Starke U., Tozzini V., Coletti C.iit
    DOI

    Electronic properties of single-layer tungsten disulfide on epitaxial graphene on silicon carbide

    Nanoscale, vol. 9, (no. 42), pp. 16412-16419
  • 2016
  • Khademi A., Sajadi E., Dosanjh P., Bonn D.A., Folk J.A., Stohr A., Starke U., Forti S.iit
    DOI

    Alkali doping of graphene: The crucial role of high-temperature annealing

    Physical Review B, vol. 94, (no. 20)
  • Stohr A., Forti S.iit, Link S., Zakharov A.A., Kern K., Starke U., Benia H.M.
    DOI

    Intercalation of graphene on SiC(0001) via ion implantation

    Physical Review B, vol. 94, (no. 8)
  • Forti S.iit, Stohr A., Zakharov A.A., Coletti C.iit, Emtsev K.V., Starke U.
    DOI

    Mini-Dirac cones in the band structure of a copper intercalated epitaxial graphene superlattice

    2D Materials, vol. 3, (no. 3)
  • 2015
  • Baringhaus J., Stohr A., Forti S., Starke U., Tegenkamp C.
    DOI

    Ballistic bipolar junctions in chemically gated graphene ribbons

    Scientific Reports, vol. 5
  • Ludbrook B.M., Levy G., Nigge P., Zonno M., Schneider M., Dvorak D.J., Veenstra C.N., Zhdanovich S., Wong D., Dosanjh P., Strasser C., Stohr A., Forti S., Ast C.R., Starke U., Damascelli A., Seamus Davis J.C.
    DOI

    Evidence for superconductivity in Li-decorated monolayer graphene

    Proceedings of the National Academy of Sciences of the United States of America, vol. 112, (no. 38), pp. 11795-11799
  • 2014
  • Baringhaus J., Stohr A., Forti S., Krasnikov S.A., Zakharov A.A., Starke U., Tegenkamp C.
    DOI

    Bipolar gating of epitaxial graphene by intercalation of Ge

    Applied Physics Letters, vol. 104, (no. 26)
  • Forti S., Starke U.
    DOI

    Epitaxial graphene on SiC: From carrier density engineering to quasi-free standing graphene by atomic intercalation

    Journal of Physics D: Applied Physics, vol. 47, (no. 9)
  • Coletti C.iit, Forti S., Principi A., Emtsev K.V., Zakharov A.A., Daniels K.M., Daas B.K., Chandrashekhar M.V.S., Macdonald A.H., Polini M., Starke U.
    DOI

    Revealing the electronic band structure of quasi-free trilayer graphene on SiC(0001)

    Materials Research Society Symposium - Proceedings, vol. 1693
  • 2013
  • Eelbo T., Waaniowska M., Thakur P., Gyamfi M., Sachs B., Wehling T.O., Forti S., Starke U., Tieg C., Lichtenstein A.I., Wiesendanger R.
    DOI

    Adatoms and Clusters of 3d Transition Metals on Graphene: Electronic and Magnetic Configurations

    Physical Review Letters, vol. 110, (no. 13)
  • Eelbo T., Waaniowska M., Gyamfi M., Forti S., Starke U., Wiesendanger R.
    DOI

    Influence of the degree of decoupling of graphene on the properties of transition metal adatoms

    Physical Review B - Condensed Matter and Materials Physics, vol. 87, (no. 20)
  • Baringhaus J., Edler F., Neumann C., Stampfer C., Forti S., Starke U., Tegenkamp C.
    DOI

    Local transport measurements on epitaxial graphene

    Applied Physics Letters, vol. 103, (no. 11)
  • Goler S.iit, Coletti C.iit, Piazza V.iit, Pingue P., Colangelo F., Pellegrini V., Emtsev K.V., Forti S., Starke U., Beltram F.iit, Heun S.
    DOI

    Revealing the atomic structure of the buffer layer between SiC(0 0 0 1) and epitaxial graphene

    Carbon, vol. 51, (no. 1), pp. 249-254
  • Coletti C.iit, Forti S., Principi A., Emtsev K.V., Zakharov A.A., Daniels K.M., Daas B.K., Chandrashekhar M.V.S., Ouisse T., Chaussende D., Macdonald A.H., Polini M., Starke U.
    DOI

    Revealing the electronic band structure of trilayer graphene on SiC: An angle-resolved photoemission study

    Physical Review B - Condensed Matter and Materials Physics, vol. 88, (no. 15)
  • 2012
  • Starke U., Forti S., Emtsev K.V., Coletti C.iit
    DOI

    Engineering the electronic structure of epitaxial graphene by transfer doping and atomic intercalation

    MRS Bulletin, vol. 37, (no. 12), pp. 1177-1186
  • Langer T., Pfnur H., Tegenkamp C., Forti S., Emtsev K., Starke U.
    DOI

    Manipulation of plasmon electron-hole coupling in quasi-free-standing epitaxial graphene layers

    New Journal of Physics, vol. 14
  • Gyamfi M., Eelbo T., Waniowska M., Wehling T.O., Forti S., Starke U., Lichtenstein A.I., Katsnelson M.I., Wiesendanger R.
    DOI

    Orbital selective coupling between Ni adatoms and graphene Dirac electrons

    Physical Review B - Condensed Matter and Materials Physics, vol. 85, (no. 16)
  • Coletti C.iit, Forti S., Emtsev K.V., Starke U.
    DOI

    Tailoring the electronic structure of epitaxial graphene on SiC(0001): Transfer doping and hydrogen intercalation

    Carbon Nanostructures, (no. 9783642206436), pp. 39-49
  • 2011
  • Emtsev K.V., Zakharov A.A., Coletti C.iit, Forti S., Starke U.
    DOI

    Ambipolar doping in quasifree epitaxial graphene on SiC(0001) controlled by Ge intercalation

    Physical Review B - Condensed Matter and Materials Physics, vol. 84, (no. 12)
  • Forti S., Emtsev K.V., Coletti C., Zakharov A.A., Riedl C., Starke U.
    DOI

    Large-area homogeneous quasifree standing epitaxial graphene on SiC(0001): Electronic and structural characterization

    Physical Review B - Condensed Matter and Materials Physics, vol. 84, (no. 12)
  • 2010
  • Coppede N., Castriota M., Cazzanelli E., Forti S., Tarabella G., Tocoli T., Walzer K., Iannotta S.
    DOI

    Controlled polymorphism in titanyl phthaloyanine on mica by hyperthermal beams: A micro-raman analysis

    Journal of Physical Chemistry C, vol. 114, (no. 15), pp. 7038-7044

CNI is back in operation!

From today 4th of May CNI has started its way to go back to normal operation. Following the recommended safety procedures for COVID-19, the researchers started their activities in the TEM, Raman spectroscopy, 2D materials growth and characterization laboratories. Soon chemical synthesis and nanoteranostic will follow. The number of researchers that enter the lab every day is still limited but as the things will go better it will growth to normal condition. We hope also that soon PhD students and master student can join us prosecuting their thesis projects.